? 2007 ixys corporation, all rights reserved symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 600 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces, v ge = 0v 50 a t j =125 c 1.0 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 24a, v ge = 15v, note 1 1.5 1.8 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c 66 a i c110 t c = 110 c 28 a i f110 t c = 110 c 10 a i cm t c = 25 c, 1ms 150 a ssoa v ge = 15v, t vj = 125 c, r g = 10 i cm = 60 a (rbsoa) clamped inductive load @ 600v p c t c = 25 c 190 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10 seconds 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (m3) 1.13/10 nm/lb.in. weight 6 g ds99906(09/07) polarhv tm igbt IXGH28N60B3D1 v ces = 600v i c110 = 28a v ce(sat) 1.8v features z square rbsoa z high current handling capability z mos gate turn-on - drive simplicity applications z pfc circuits z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies z ac motor speed control z dc servo and robot drives z dc choppers advance technical information g = gate c = collector e = emitter tab = collector c (tab) g c e to-247 (ixgh)
ixys reserves the right to change limits, test conditions, and dimensions. IXGH28N60B3D1 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c110 , v ce = 10v, note 1 18 30 s c ies 2320 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 176 pf c res 24 pf q g 62 nc q ge i c = i c110 , v ge = 15v, v ce = 0.5 ? v ces 11 nc q gc 23 nc t d(on) 19 ns t ri 24 ns e on 0.34 mj t d(off) 125 200 ns t fi 100 160 ns e off 0.65 1.2 mj t d(on) 19 ns t ri 26 ns e on 0.6 mj t d(off) 180 ns t fi 170 ns e off 1.0 mj r thjc 0.66 c/w r thcs 0.21 c/w inductive load, t j = 25 c i c = 24a, v ge = 15v v ce = 400v, r g = 10 inductive load, t j = 125 c i c = 24a, v ge = 15v v ce = 400v, r g = 10 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 (ixgh) outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source tab - drain note 1: pulse test, t 300 s; duty cycle, d 2%. reverse diode (fred) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v f i f = 24a, v ge = 0v, note 1 2.5 v t j = 150 c 1.7 v i rm i f = 24a, v ge = 0v, -di f /dt = 100a/ s 5 a v r = 100v t rr i f = 1a, -di f /dt =100a/ s, v r = 30v 25 ns t j = 100 c 100 ns r thjc 1.0 k/w
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